Integration of GaN-SiC and GaN-diamond by surface activated bonding methods
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-04-01 |
| Authors | Fengwen Mu, Tadatomo Suga |
| Institutions | The University of Tokyo |
| Citations | 1 |
Abstract
Section titled āAbstractāIntegration of GaN with SiC and diamond is one solution for the heat dissipation of high-power and high-frequency GaN device. In this research, both of GaN-SiC integration and GaN-diamond integration have been realized by surface activated bonding methods at room temperature. The bonding interfaces were investigated to understand the bonding mechanisms.