Preparation of α‐Si 3 N 4 by direct nitridation using polysilicon waste by diamond wire cutting
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-04-10 |
| Journal | International Journal of Applied Ceramic Technology |
| Authors | Yong Hou, Guo‐Hua Zhang, Kuo‐Chih Chou |
| Institutions | University of Science and Technology Beijing |
| Citations | 16 |
Abstract
Section titled “Abstract”Abstract With the rapid development of the semiconductor industry and solar photovoltaic industry, a large number of polysilicon wastes from diamond wire cutting are accumulated, which not only pollute the environment, but also cause safety problems due to the ultrafine particle size and high reactivity. The diamond wire cutting polysilicon waste was used to prepare α‐Si 3 N 4 by direct nitridation method. This method could not only fully recycle the waste and reduce environmental pollution, but also could reduce the production cost of α‐Si 3 N 4 . Furthermore, the effects of FeCl 3 , NaCl, and metal Cu on the nitridation of polysilicon waste are investigated in detail, respectively. It is found that FeCl 3 and NaCl are not ideal additives for the preparation of α‐Si 3 N 4 . However, α‐Si 3 N 4 ‐dominated Si 3 N 4 can be obtained via adding 5 wt% Cu after nitridation at 1250°C for 8 hours, and the relative content of α‐Si 3 N 4 reaches 92.37%.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
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