Room temperature bonding of GaN on diamond by using Mo/Au nano-adhesion layer
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-05-01 |
| Authors | Kang Wang, Kun Ruan, Wenbo Hu, Shengli Wu, Hongxing Wang |
| Institutions | Xiāan Jiaotong University |
| Citations | 1 |
Abstract
Section titled āAbstractāFor solving the heat dissipation of high-power GaN devices, GaN was bonded on diamond at room temperature by using Mo/Au nano-adhesion layer. For a bonded GaN-on-diamond sample, the voidage is less than 3.0%, and the tensile strength reaches 6.8 MPa.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2013 - A new high power GaN-on-Diamond HEMT with low-temperature bonded substrate technology