The bulk conversion depth of the NV-center in diamond - computing a charged defect in a neutral slab
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-05-01 |
| Journal | New Journal of Physics |
| Authors | Robin Lƶfgren, Ravinder Pawar, Sven Ćberg, J. Andreas Larsson |
| Institutions | LuleƄ University of Technology |
| Citations | 16 |
Abstract
Section titled āAbstractāAbstract The negatively charged nitrogen vacancy (NV ā ) center in diamond has properties that make it a promising candidate for applications such as a qubit in room temperature quantum computing, single-molecule photoluminescence and NMR sensor, and as a single photon source for quantum cryptography. For many of its uses it is desirable to have the NV-center close to the diamond surface. In this work, we use density functional theory simulations to investigate how the distance of the NV ā center to a surface, and its orientation, affect its properties, including the zero-phonon-line. We study the three technologically important surfaces terminated with fluorine, oxygen/hydroxyl and nitrogen. Since the NV-center is charged it requires special measures to simulate within a slab-model. We use the recently proposed charging with a substitutional donor in the diamond lattice resulting in a neutral super-cell, which provides very satisfactory results. We have found that the NV-centers properties converge to bulk values already at 5 Ć depth.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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