RF Performance of Hydrogenated Single Crystal Diamond MOSFETs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-06-01 |
| Authors | Cui Yu, Chuangjie Zhou, Jianchao Guo, Zezhao He, Qingbin Liu |
| Institutions | Hebei Semiconductor Research Institute, Xiāan Jiaotong University |
| Citations | 10 |
Abstract
Section titled āAbstractāHydrogenated diamond MOSFETs with gate length of 350 nm are fabricated by a self-aligned process on (001)-oriented single crystal diamond substrate. The hydrogen-terminated diamond MOSFETs show maximum drain current density of 233 mA/mm at V <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>GS</sub> =-4 V, and transconductance of 62 mS/mm. The maximum output power density reaches 815 mW/mm at 2 GHz, which is the highest reported value for diamond transistors measured at 2 GHz.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2012 - Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by Al2O3 Passivation Layer [Crossref]