High-Q/V Photonic Crystal Cavities and QED Analysis in 3C-SiC
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-07-08 |
| Journal | ACS Photonics |
| Authors | Ioannis Chatzopoulos, F. De Martini, Robert ÄerÅanskĆ½, Alberto Politi |
| Institutions | University of Southampton |
| Citations | 16 |
Abstract
Section titled āAbstractāSolid state quantum emitters are among the most promising candidates for single photon generation in quantum technologies. However, they suffer from decoherence effects that limit their efficiency and indistinguishability. For instance, the radiation emitted in the zero phonon line (ZPL) of most color centers is on the order of a few percent (e.g., NV- centers in diamond, VSiVC in SiC), limiting the emission rate of single photons as well as the efficiency. At the same time, reliable interfacing with photons in an integrated manner still remains a challenge in both diamond and SiC technology. Here we develop photonic crystal cavities with Q factors in the order of 7100 in 3C SiC. We discuss how this high confinement cavity can significantly enhance the fraction of photons emitted in the ZPL and improve their characteristics. We study the requirements to place SiC color centers in the strong coupling condition and analyze the maximum attainable enhancement in the weak coupling regime. The robustness of the increased efficiency and improved indistinguishability can open the way to quantum technologies in the solid state.