Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-07-19 |
| Journal | QST-Repository (National Institutes for Quantum and Radiological Science and Technology) |
| Authors | Sato Shin-ichiro |
Abstract
Section titled āAbstractāWe investigated near infrared photoluminescence (PL) spectra at room temperature of irradiated HPSI-4H-SiCs and found that PL ranging from 1100 nm to 1500 nm was strongly associated with the formation of nitrogen vacancy centers in 4H-SiC.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal Sourceā- DOI: None