Thermal expansion coefficients of high thermal conducting BAs and BP materials
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-07-01 |
| Journal | Applied Physics Letters |
| Authors | Sheng Li, Keith M. Taddei, Xiqu Wang, Hanlin WU, Joerg Neuefeind |
| Institutions | The University of Texas at Dallas, University of Houston |
| Citations | 19 |
Abstract
Section titled āAbstractāRecently reported very high thermal conductivities in cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully facilitate such an application, the compatible coefficient of thermal expansion (CTE) between the heat spreader and the device substrate, in order to minimize the thermal stress, needs to be considered. Here, we report our experimental CTE studies of BAs and BP in the temperature range from 100 K to 1150 K, through a combination of X-ray single crystal diffraction and neutron powder diffraction. We demonstrated that the room temperature CTEs, 3.6 Ā± 0.15 Ć 10ā6/K for BAs and 3.2 Ā± 0.2 Ć 10ā6/K for BP, are more compatible with most of the semiconductors including Si and GaAs, in comparison with diamond, and thus could be better candidates for the future heat spreader materials in power electronic devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2011 - Advanced Materials for Thermal Management of Electronic Packaging