In situ Measurement of Diamond/SiC Interfacial Strength
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2019-08-01 |
| Journal | Microscopy and Microanalysis |
| Authors | Yuying Zhang, ChunâYen Hsu, Yong Zhao, Prashant Karandikar, Chaoying Ni |
| Institutions | Cube Technology (United States), University of Delaware |
Abstract
Section titled âAbstractâReaction bonded (RB) diamond/SiC composites were prepared by pressureless liquid Si infiltration technique.Reaction bonding fabrication starts with preparing diamond/SiC porous preform and then infiltrates molten Si at a temperature of ~1450 °C under a vacuum condition.The resulting products are fully dense with advanced thermal and mechanical properties which make them premier candidates for applications in defense, high energy laser mirror, semiconductor fabrication, machining and aerospace industries.Because of the high processing temperature, preform component selection and phase formation complexities, the RB diamond/SiC composite properties are a strong function of the resulting microstructures, especially the interfaces.Liu et al., [1] reported that the diamond particle size in the preform and composite porosity strongly affect the surface hardness, flexural strength, and fracture toughness.Tressler et al. [2] studied the crack propagation inside the RB SiC/Si composites and proposed two failure mechanisms which could affect the mechanical performance.Interfacial strength and intergranular failure are important parameters for understanding and evaluating the mechanical behavior of the composite, especially for composites with interfacial complexities such as those in RB composites.However, to the best of the authorsâ knowledge, there was limited investigation on the interfacial bonding strength of the RB diamond/SiC composites.In this work, we developed a home-made tensile stage for in-situ study of the interfacial strength of diamond/SiC.