Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-08-07 |
| Journal | physica status solidi (a) |
| Authors | Z. Remeš, Jiří Stuchlík, H. Stuchlı́ková, Kateřina Aubrechtová Dragounová, Petr Ashcheulov |
| Institutions | Czech Academy of Sciences, Institute of Physics, SVCS Process Innovation (Czechia) |
| Citations | 6 |
Abstract
Section titled “Abstract”Hydrogenated amorphous substoichiometric silicon carbide (a‐Si 1− x C x :H, x < 0,1) thin films and diodes with low carbon content are prepared from a mixture of H 2 , SiH 4 , and CH 4 by plasma‐enhanced chemical vapor deposition at a relatively high temperature of 400 °C on semi‐transparent boron‐doped nanocrystalline diamond (B‐NCD) electrodes with an underlying Ti grid. Vibration spectra indicate that CH 4 prevents Si crystallization at elevated deposition temperatures and confirm an increasing carbon content up to x = 0.1 for samples grown with SiH 4 /CH 4 flows up to 1:3. Dark current-voltage characteristics of B‐NCD/a‐Si 1− x C x :H diodes show a rectifying ratio of about four orders at ±1 V. However, under white light illumination, an energy conversion efficiency of 4% is limited by a high serial resistivity of the B‐NCD electrode and S‐shaped photocurrent near the open‐circuit voltage.