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6CCVD Research

A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2019-09-25
JournalCrystals
AuthorsMohamadali Malakoutian, Matthew A. Laurent, Srabanti Chowdhury
InstitutionsStanford University, University of California, Davis
Citations26

Abstract

Section titled ā€œAbstractā€

Diamond has the most desirable thermal properties for applications in electronics. In principle, diamond is the best candidate for integration with other materials for thermal management due to its high thermal conductivity. Therefore, if low thermal boundary resistance can be developed between diamond and the semiconductor material, it would most effectively channel the heat away from areas of high power dissipation. Recent advancement of N-polar GaN in high power RF and conventional power electronics motivated us to study the diamond/Si3N4/GaN interface to understand how effectively the heat can be transferred from the GaN channel to diamond heat-sink. Prior studies showed that there are challenges in incorporating diamond with GaN while still maintaining the high crystalline quality necessary to observe the desirable thermal properties of the material. Therefore, in this study we investigated the influence of methane concentration (0.5-6%), gas pressure (40-90 Torr), sample surface temperature (600-850 Ā°C), and growth duration (1~5 h) on polycrystalline diamond growth. The diamond/Si3N4/GaN interface looks abrupt with no signs of etching of the GaN for the samples with methane concentration above 2%, pressures up to 90 Torr, and temperatures < 850 Ā°C, allowing for incorporation of diamond close to the active region of the device. This approach contrasts with most prior research, which require surface roughening and thick growth on the backside.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 1991 - Diamond chemical vapor deposition [Crossref]
  2. 2000 - The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTā€™s [Crossref]
  3. 2001 - Very-high power density AlGaN/GaN HEMTs [Crossref]
  4. 2010 - AlGaN/GaN HEMT with 300-GHz fmax [Crossref]
  5. 2002 - AlGaN/GaN HEMTsā€”An overview of device operation and applications [Crossref]
  6. 2001 - AlGaN/AlN/GaN high-power microwave HEMT [Crossref]
  7. 2018 - N-Polar GaN HEMTs exhibiting record breakdown voltage over 2000 v and Low Dynamic On-Resistance [Crossref]
  8. 2013 - N-polar GaN epitaxy and high electron mobility transistors [Crossref]

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