High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-09-24 |
| Journal | IEEE Electron Device Letters |
| Authors | Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide |
| Institutions | National Institute for Materials Science |
| Citations | 24 |
Abstract
Section titled āAbstractāSchottky diodes and metal-semiconductor field-effect transistors (MESFETs) are fabricated on a quite smooth and high boron doping level diamond epitaxial layer. Forward current density maximum for the Schottky diode is 0.6 A cm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>-2</sup> with the on/off ratio higher than 10 <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>8</sup> . Ideality factor and barrier height for Pt metal on the boron-doped diamond are evaluated to be 1.07 and 1.38 eV, respectively. Drain current maximum for the MESFET is -0.55mA mm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>-1</sup> , which is nine times higher than that of the previous report. Origin of it is possibly attributed to the good surface quality and high boron concentration for the B-diamond.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1972 - threshold voltages of normally off mesfetās [Crossref]