Diamond-like carbon as gate dielectric for metal–insulator–semiconductor applications
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-10-17 |
| Journal | Modern Physics Letters B |
| Authors | Shing-Long Tyan, Hsiang-Chi Tang, Zhang-Wei Wu, Ting‐Shan Mo |
| Institutions | National Cheng Kung University, Kun Shan University |
| Citations | 2 |
Abstract
Section titled “Abstract”Diamond-like carbon (DLC) has been studied as a dielectric material for future metal-insulator-semiconductor (MIS) technology. In this paper, ultrathin DLC films were deposited on silicon substrates by using the dc magnetron sputtering technique at various deposition voltages. The current-voltage characteristics indicated that the leakage currents of the MIS devices decreased with an increase in deposition voltages, and that a low leakage current ([Formula: see text] A/cm 2 ) was achieved at −2 V bias voltage. The deposition voltage effects on the structures of films were investigated through Raman spectroscopy, which indicated that the sp 3 bonding fraction decreased with an increase in the deposition voltage. The ramp-voltage breakdown test revealed high effective breakdown electric field ([Formula: see text]85 MV/cm) for the MIS device with the DLC film deposited at 1100-V deposition. Stress-induced leakage current measurement indicated that the DLC film exhibited excellent reliability.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2009 - IEEE Int. Conf. Electron Devices and Solid-State Circuits EDSSC