Effect of the Gas Chemistry, Total Pressure, and Microwave Power on the Grain Size and Growth Rate of Polycrystalline Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition Technique
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-10-01 |
| Journal | 2019 7th International Engineering, Sciences and Technology Conference (IESTEC) |
| Authors | Pablo Tirado, Jesús Alcántar, Elida de Obaldía, Rafael García, Orlando Auciello |
| Institutions | Universidad Tecnológica de Panamá, Center for Engineering and Industrial Development |
| Citations | 3 |
Abstract
Section titled “Abstract”The combined effect of total gas pressure (20-80 mbar), precursor gas chemistry (Ar/CH <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>4</sub> /H <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> ) and microwave power on the grain size and growth rate of polycrystalline diamond films, grown by MPCVD, was investigated. The key findings are: 1) Grain size of polycrystalline diamond films depends critically on the total gas pressure such that a minimum pressure of 60 mbar is needed to grow nanocrystalline diamond films (grain size of 100s of nanometers) even when using a hydrogen rich gas chemistry (98% H <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> , 2% CH <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>4</sub> ); 2) For a fixed gas pressure, the grain size of polycrystalline diamond films increases as the H <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> concentration increases, and decreases as the Ar concentration decreases, resulting in a maximum grain size for Ar 0%/CH <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>4</sub> 2%, H <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> 98% gas mixture and a minimum grain size for Ar 98%/CH <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>4</sub> 2%, H <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> 0% gas mixture; 3) The microwave power (1900-2500 W) effect on grain size and growth rate.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2017 - Fundamentals towards large area synthesis of multifunctional Ultrananocrystalline diamond films via large area hot filament chemical vapor deposition bias enhanced nucleation/bias enhanced growth for fabrication of broad range of multifunctional devices [Crossref]
- 2005 - Raman spectroscopy: a simple non-destructive way to characterize diamond and diamond-like materials
- 1993 - Interactive software for calculating and displaying X-ray or neutron powder diffractometer patterns of crystalline materials
- 2006 - Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD [Crossref]