H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-11-13 |
| Journal | IEEE Electron Device Letters |
| Authors | Reza Soleimanzadeh, Mehdi Naamoun, Riyaz Abdul Khadar, Remco van Erp, Elison Matioli |
| Institutions | Ćcole Polytechnique FĆ©dĆ©rale de Lausanne |
| Citations | 16 |
Abstract
Section titled āAbstractāIn many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization of the microwave-plasma chemical-vapor-deposition of diamond on GaN, the polycrystalline layer was hydrogenated to form a 2D hole-gas at the surface, acting as p-channel. Relying on a rather simple fabrication process, these devices exhibited excellent electrical and thermal performances with on-off ratio of 10<sup>9, breakdown voltage of 400 V, specific on-resistance of 84 mĪ©Ā·cm<sup>2, and thermal conductivities higher than 900 W/mĀ·K. The presented hetero-integration technology provides a promising platform for future complementary logic operations, gate drivers, complementary power switch applications such as integrated power inverters and converters, simultaneously serving as a very efficient thermal management solution in high power density applications.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2017 - Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications [Crossref]