Mirror Finishing of SiC by UV-Assisted Constant-Pressure Grinding
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-11-05 |
| Journal | International Journal of Automation Technology |
| Authors | Moe Mekata, Minoru Ota, Keishi Yamaguchi, Kai Egashira |
| Citations | 6 |
Abstract
Section titled āAbstractāSilicon carbide (SiC) is a next-generation semiconductor material. However, SiC is difficult to machine because it has high mechanical hardness and chemical inertness. Therefore, high-quality processing technology with high efficiency is now required. In our previous study, the authors developed UV-assisted grinding method and clarified that the critical depth of cut is expanded by UV irradiation and that the surface roughness is reduced by applying this method with a composite-abrasive wheel containing diamond abrasive grains with a mean abrasive diameter of 6 Ī¼m. On the other hand, it is important to reduce the damaged layer left by lapping or polishing process after grinding. In this study, we developed UV-assisted constant-pressure grinding method as a new alterative processing method to lapping and polishing. In this method, UV-assisted grinding is applied to the constant-pressure grinding method. To obtain a higher-quality mirror surface, we used a superabrasive wheel containing diamond abrasive grains with a mean abrasive diameter of 0.5 Ī¼m. By investigating the influence of UV irradiation on processing characteristics, we clarified that the surface roughness and removal height were reduced by UV irradiation. Finally, a high quality surface with few grinding marks was obtained by UV-assisted constant-pressure grinding.