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6CCVD Research

Analysis and improvement of self-heating effect based on GaN HEMT devices

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-07-01
JournalMaterials Research Express
AuthorsZhipeng Zuo, Naiyun Tang, Hui Chen
InstitutionsShanghai University of Electric Power
Citations5

Abstract

Section titled ā€œAbstractā€

Abstract Gallium nitride high electron mobility transistor (GaN HEMT) applications in high-power and high-frequency environments can lead to high device temperatures due to the self-heating effect, thus limiting device performance and reliability. In order to address this problem, this paper changes the material and structure of the device. It successfully reduces the maximum temperature of the device to 335 K by using a new structure of the diamond substrate, diamond heat sink layer, and InGaN insertion layer. Simulation results show that the new structure has a 35% reduction in maximum temperature, a 61% increase in current, a 37% improvement in maximum transconductance, and a 35% improvement in current collapse. At the same time, the new structure also improves the electron mobility of the channel.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2019 - A broadband hybrid GaN cascode low noise amplifier for WiMax applications [Crossref]
  2. 2020 - Reliable noise modeling of GaN HEMTs for designing low-noise amplifiers [Crossref]
  3. 2020 - Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate-connected FP based on equivalent potential method [Crossref]
  4. 2020 - Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors [Crossref]
  5. 2018 - Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates IEEE Electr [Crossref]
  6. 2016 - Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties [Crossref]
  7. 2019 - Thermal conductivity of crystalline AlN and the influence of atomic-scale defects [Crossref]
  8. 2018 - An over 20-W/mm S-band InAlGaN/GaN HEMT with SiC/diamond-bonded heat spreader [Crossref]
  9. 2013 - Electrical and thermal performance of AlGaN/GaN HEMTs on diamond substrate for RF applications, IEEE Compound semiconductor integrated circuit symposium (CSICS) [Crossref]
  10. 2019 - A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si3N4- coated N-polar GaN [Crossref]

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