Over 12000 A/cm2and 3.2 m$Omega$ cm2Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-11-15 |
| Journal | IEEE Electron Device Letters |
| Authors | Masayuki Iwataki, Nobutaka Oi, Kiyotaka Horikawa, Shotaro Amano, Jun Nishimura |
| Institutions | Waseda University, Nagoya University |
| Citations | 37 |
Abstract
Section titled “Abstract”We present a miniaturized vertical-type twodimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2-μm-wide trench and disposed a part of the gate electrode to overlap the Al <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</sub> insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of ID = 12800 A/cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> at V <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DS</sub> = -50 V and the specific on-resistance of R <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>ON</sub> = 3.2 mcm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> at V <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DS</sub> = -10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 °C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2016 - Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate [Crossref]
- 2016 - Design and fabrication of high-performance diamond triple-gate field-effect transistors
- 2018 - Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors [Crossref]
- 2011 - High performance SiC trench devices with ultra-low ron
- 2015 - Ultra high voltage MOS controlled 4H-SiC power switching devices [Crossref]