Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-11-25 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto, Atsushi Yamada, Kozo Makiyama |
| Institutions | Fujitsu (Japan) |
| Citations | 48 |
Abstract
Section titled āAbstractāGaN-based high-electron-mobility transistors (HEMTs) fabricated on SiC substrates were successfully bonded to single-crystal diamond heat spreader by a surface activated bonding method with a thin titanium (Ti) cover layer. A thin Ti layer on the diamond improved the bonding strength of the SiC/diamond interface since the formation of an amorphous layer on the diamond surface was suppressed. This SiC/diamond bonding process was applied to high-output power InAlGaN/GaN HEMTs on diamond heat spreaders. The structure with the diamond successfully reduced the thermal resistance of the devices and enabled their high-power operation.