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6CCVD Research

New semiconductor technologies for power electronics

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2019-12-01
AuthorsAlisson Mengatto, Jose Adriano Damacena Diesel, Pedro Henrique Thiesen de Franca, Joselito A. Heerdt
InstitutionsItaipu Binacional, Universidade do Estado de Santa Catarina
Citations3

Abstract

Section titled ā€œAbstractā€

With the silicon power devices limits being reached, there is a need for new semiconductor technologies with higher efficiency, power density, voltage, current and switching speed. The materials that suit these requirements are called wide band semiconductors, featuring silicon carbide, gallium nitride, gallium arsenide and diamond. This paper presents the main characteristics of work of the gallium nitride transistor, with a brief comparison between the technologies mentioned above. Also, an experimental setup based on a double pulse tester is used to evaluate and compare the conduction and switching losses in different conditions.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 0 - Application note AN-0002
  2. 0 - Application note AN-0004
  3. 0 - Application note AN-0003
  4. 0 - Application note AN-0008
  5. 2015 - Análise de perdas em diferentes tipos de dispositivos semicondutores de potência e aplicação em conversor estático
  6. 2015 - Design and Implementation of a High-efficiency Three-level Inverter Using GaN HEMTs
  7. 2014 - Wide Bandgap (SiC/GaN) Power Devices Characterization and Modeling: application to HF Power Converters

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