650 mW/mm output power density of H‐terminated polycrystalline diamond MISFET at 10 GHz
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-01-14 |
| Journal | Electronics Letters |
| Authors | Cui Yu, Chuang Jie Zhou, Jian Chao Guo, Ze He, Hong Xing Wang |
| Institutions | Hebei Semiconductor Research Institute, Xi’an Jiaotong University |
| Citations | 19 |
Abstract
Section titled “Abstract”In this work, metal-insulator-semiconductor field effect transistors (MISFET) with gate length of 350 nm were fabricated on hydrogen‐terminated polycrystalline diamond by a self‐aligned process. Aluminium film with thickness of 2 nm was evaporated on the sample and formed self‐oxidised alumina to act as the gate dielectric. The devices show good direct current and radio frequency performances with a maximum frequency of oscillation ( f max ) of 34 GHz and continuous‐wave output power density of 650 mW/mm at 10 GHz.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2019 - RF performance of hydrogenated single crystal diamond MOSFETs
- 2018 - Diamond RF transistor technology with ft = 41 GHz and fmax = 44 GHz