Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-01-01 |
| Authors | Vikrant J. Gokhale, Brian P. Downey, Matthew T. Hardy, Eric N. Jin, J.A. Roussos |
| Institutions | National Academies of Sciences, Engineering, and Medicine, United States Naval Research Laboratory |
| Citations | 18 |
Abstract
Section titled āAbstractāThis report presents some of the first experimental characterization of surface acoustic wave (SAW) devices using single-crystal ScAlN epitaxially grown on SiC. Due to the excellent wave guiding provided by the ScAlN/SiC heterostructure, SAW phase velocities greater than 12,000 m/s are measured, higher than comparable ScAlN SAW devices on other substrates. The phase velocity dispersion for measured devices compares well with simulated values. We observe up to k <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> =0.52% even for very small thickness to wavelength ratios ( ). We show that epitaxial ScAlN/SiC can achieve extremely low SAW propagation loss ( ), comparable to state-of-the-art piezoelectric/diamond SAW devices, and are linear at CW RF power levels up to ā30 dBm (1W), with 1 dB gain compression at 34 dBm and an IIP3 of 45 dBm.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2016 - Enhancement of effective electromechanical coupling factor by mass loading in layered surface acoustic wave device structures [Crossref]
- 2019 - Epitaxial Transition Metal Nitride/III N Alloys for RF Devices
- 0 - Single Crystalline ScAlN Surface Acoustic Wave Resonators with Large Figure of Merit ($\mathrm{Q}\times \mathrm{k}\square ^{2}$)