Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3Gate Dielectric
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-01-01 |
| Journal | IEEE Access |
| Authors | Zeyang Ren, Qi He, Jiamin Xu, Guansheng Yuan, Jinfeng Zhang |
| Institutions | Wuhu Institute of Technology, Xidian University |
| Citations | 10 |
Abstract
Section titled “Abstract”C-H diamond metal-oxide-semiconductor field effect transistors with different structures were fabricated on the same polycrystalline diamond plate. Devices A and B with 25-nm-thick high temperature (300°C) atomic layer deposition grown Al<sub>2</sub>O<sub>3</sub> dielectric have the same source-to-drain distance of 6 μm and different gate length of 2 μm and 6 μm, respectively. Both devices show ultra-high on/off ratio of over 1010 and ultra-low gate leakage of below 10<sup>-10</sup> A and continuous measurement stability. Device B with the source/drain-channel interspaces eliminated has achieved an on resistance of 46.20 Ω·mm, which is record low in the reported 6-μm H-diamond MOSFETs with the gate dielectric prepared at high temperature (≥ 300 °C). Meanwhile, device B shows larger drain current in a large portion of the linear region at VGS = -6 V, and a just slightly smaller IDmax compared with device A though its LG is three times of that of device A. A simple model of ID was used to explain the physics behind this phenomenon. In addition, the breakdown voltage is 145 V for device A and 27 V for device B, corresponding to the average breakdown field of about 0.72 MV/cm and 10.8 MV/cm, respectively.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2014 - Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric [Crossref]
- 2014 - High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al2O3 [Crossref]