Preferential Placement of Aligned Nitrogen Vacancy Centers in Chemical Vapor Deposition Overgrown Diamond Microstructures
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2021-09-09 |
| Journal | physica status solidi (RRL) - Rapid Research Letters |
| Authors | Arne Götze, Nico Striegler, Alastair Marshall, Philipp Neumann, Christian Giese |
| Institutions | OmniVision Technologies (Germany), Fraunhofer Institute for Applied Solid State Physics |
| Citations | 8 |
Abstract
Section titled âAbstractâThe usefulness of nitrogen vacancy (NV) centers in diamond is augmented by a low defect and impurity density in the surrounding host material, and applications benefit from the ability to control the position of the NV centers. Herein, a process to create NV centers on singleâcrystalline diamond microstructures by chemical vapor deposition (CVD) is presented. Pyramidal structures with {111} side facets are formed during the intrinsic overgrowth of dry chemically etched cylindrical pillars on a substrate with {100} surface orientation. A thin nitrogenâdoped epitaxial layer is deposited on top of the pyramids resulting in the creation of NV centers exclusively on the {111} pyramid side faces. Optically detected magnetic resonance (ODMR) and spin echo measurements reveal preferential alignment of the NV centers in a single {111} direction and a time of . The time of the NV centers is limited by the surrounding substitutional nitrogen (P1 center) concentration of . A low density of other paramagnetic spin noise is detected by doubleâelectron electron resonance (DEER) measurements.