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6CCVD Research

The design and performance of hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors with high k oxide HfO2

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2020-01-08
JournalMicro and Nano Engineering
AuthorsChi Sun, Tingting Hao, Junjie Li, Haitao Ye, Changzhi Gu
InstitutionsUniversity of Chinese Academy of Sciences, Songshan Lake Materials Laboratory
Citations10

Abstract

Section titled ā€œAbstractā€

The hydrogen plasma treatment of single crystal diamond was carried out by microwave plasma chemical vapor deposition equipment, and the normally-off hydrogen-terminated diamond field-effect transistors (FETs) with different gate lengths were prepared by atomic layer deposition (ALD) which deposited HfO2 as gate oxide. We systematically investigated the influence of hydrogen treatment duration, gate length, channel length and gate oxide material HfO2 on the hydrogen-terminated diamond FETs. Results show that the HfO2 gate oxide allows the fabricated FETs to exhibit a normally-off characteristic, which is advantageous for the practical application of power devices. The drain-source current, threshold voltage, subthreshold swing, and Ion/Ioff of the fabricated diamond FETs with gate length of 5 Ī¼m are 11 mA/mm, āˆ’2.9 V, 3 mS/mm, and 106, respectively. With the increase of the gate length (Lg = 5 Ī¼m, 20 Ī¼m, 50 Ī¼m), the drain current density, threshold voltage, and transconductance of the devices decrease, which is due to the higher channel resistance and inhomogeneity of the hydrogen surface termination. Keywords: H-diamond, MOSFET, high-k, Normally-off

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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  3. 2014 - Diamond electronic devices fabricated using heavily doped hopping p + and n+ layers [Crossref]
  4. 1989 - Resistivity of chemical vapor deposited diamond films [Crossref]
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  6. 1996 - Hydrogen-terminated diamond surfaces and interfaces [Crossref]
  7. 2007 - Diamond as a unique high-tech electronic material: difficulties and prospects [Crossref]
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  9. 2000 - Origin of surface conductivity in diamond
  10. 2000 - Hypothesis on the conductivity mechanism in hydrogen terminated diamond films [Crossref]

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