Optimization of Reactive Ion Etching of Polycrystalline Diamond for MEMS Applications
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2015-09-29 |
| Journal | Journal of Microelectromechanical Systems |
| Authors | Zongliang Cao, Michael Varney, Dean M. Aslam |
| Institutions | Michigan State University |
| Citations | 1 |
Abstract
Section titled “Abstract”It has been found that diamond columns can be formed unintentionally in reactive ion etching (RIE) with O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> plasma even without a precoated metal layer. The experimental results indicate that the existence of these diamond columns prevents the effective removal of polycrystalline diamond (poly-C), also known as microcrystalline diamond. A three-step sequential RIE of poly-C thin film in CF <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>4</sub> (or CF <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>4</sub> /Ar), O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> , and H <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> plasmas is developed using lithographically patterned Al acting as a hard mask to achieve a smooth-etched surface after the removal of poly-C. This etching technique can remove a thick poly-C layer very effectively. For the first time, this letter eliminates RIE-related damage to underlying substrate (specific to RIE of poly-C) to optimize the technology for single- and multi-material MEMS made from poly-C. [2015-0141]