On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-02-21 |
| Journal | International Journal of RF and Microwave Computer-Aided Engineering |
| Authors | Anwar Jarndal, L. Arivazhagan, D. Nirmal |
| Institutions | Karunya University, University of Sharjah |
| Citations | 49 |
Abstract
Section titled “Abstract”In this article, threading dislocations and its impact on the electrical and thermal performance of GaN-on-Diamond (Dia), -SiC, and -Si high electron mobility transistor (HEMT) has been investigated. TCAD simulation of GaN-HEMT is performed with various buffer traps to mimic the lattice mismatch/dislocation density at GaN/Si, GaN/SiC, and GaN/Dia interface. It has been found that, the dislocations not only induce traps, but also degrade the thermal conductivity of the GaN-buffer. This accordingly could deteriorate the thermal characteristic of GaN-on-Dia, which has higher lattice mismatch with respect to GaN-on-SiC. This investigation showed that the growth process of GaN-on-Dia should be optimized in order to reduce the threading dislocations. This accordingly could dramatically further improve its outstanding thermal characteristics with respect to GaN-on-SiC and GaN-on-Si devices.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2018 - A broadband hybrid GaN cascode low noise amplifier for WiMax applications
- 1998 - Principles of Physics