(Invited) Ultrawide Bandgap Transistors for High Temperature and Radiation Hard Applications
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-09-30 |
| Journal | ECS Transactions |
| Authors | M. S. Shur |
| Institutions | Rensselaer Polytechnic Institute |
| Citations | 2 |
Abstract
Section titled āAbstractāUltra-wide bandgap semiconductors - boron nitride, diamond, gallium oxide, and AlN - have a potential for high-temperature and radiation hard applications. These materials have a high breakdown field and large atom displacement energy correlated with a higher radiation hardness. Some of these materials, especially diamond, have a high thermal conductivity supporting a better heat handling capability, high low field mobility, and a high saturation velocity (for example, boron nitride) enabling a higher operating frequency, better microwave devices, and supporting operation in the 300 GHz band and above.