Book reviews [6 books reviewed]
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2020-03-01 |
| Journal | IEEE Electrical Insulation Magazine |
| Authors | J.J. Shea |
| Analysis | Full AI Review Included |
Executive Summary
Section titled âExecutive SummaryâThis analysis focuses on the emerging field of Ultra-Wide Bandgap Semiconductor (UWBGS) materials, positioning them as the next generation of high-performance electronic materials beyond Silicon Carbide (SiC) and Gallium Nitride (GaN).
- Core Value Proposition: UWBGS materials (including AlGaN, diamond, beta-Ga2O3, and boron nitrides) promise significantly higher breakdown fields, superior temperature stability, and enhanced irradiation robustness compared to existing Wide Bandgap (WBG) materials.
- Key Materials: The research details the development and application of AlGaN, synthetic diamond, and beta-Ga2O3, which are critical for next-step power and optoelectronic devices.
- Processing Focus: Significant effort is dedicated to mastering epitaxial growth techniques, controlling defects in AIN substrates and films, and developing single-crystal wafer production for diamond.
- Device Implementation: Specific device fabrication methods are covered, including diamond-based Schottky barrier diodes, FETs, and MOSFETs, demonstrating practical device physics.
- High-Performance Applications: The primary commercial targets are high-efficiency power electronic applications (inverters, converters) and specialized optoelectronic devices, such as solar-blind deep-UV detectors.
- Reference Value: The work serves as an in-depth technical reference for researchers seeking materials superior to current WBG standards in fast-growing electronic fields.
Technical Specifications
Section titled âTechnical SpecificationsâThe following table summarizes the key material properties and performance targets discussed for UWBGS materials, often presented in comparison to established WBG materials (SiC, GaN).
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Material Class | Ultra-Wide Bandgap (UWBGS) | N/A | Successor materials to WBG (SiC, GaN) |
| Target Breakdown Field | Higher | N/A | Critical for high-voltage power switching devices |
| Target Temperature Stability | Higher | N/A | Required for high-power, harsh environment operation |
| Irradiation Robustness | Higher | N/A | Compared to current WBG semiconductors |
| Diamond Device Types | Schottky, FETs, MOSFETs | N/A | Devices fabricated using synthetic diamond wafers |
| Diamond Application | Deep-UV Detection | N/A | Used for solar-blind sensing applications |
| Sapphire Optical Range | UV to far IR | Wavelength | Transmission range comparison with diamond |
| Diamond Structure | Crystal Structure | N/A | Essential details of sp3 structure are described |
| Beta-Ga2O3 Focus | Growth Methods, Defects | N/A | Chapter 3 details processing and impurity control |
Key Methodologies
Section titled âKey MethodologiesâThe research outlines several critical methodologies necessary for the successful development and deployment of UWBGS materials and devices.
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Material Growth and Synthesis:
- Synthetic Diamond: Description of various growth methods and processes for achieving single-crystal wafer production.
- Epitaxial Film Growth: Detailed discussion of techniques for growing AlGaN epitaxial films and controlling defects in AIN substrates.
- Beta-Ga2O3 Processing: Coverage of growth methods, defect analysis, and impurity control specific to beta-Ga2O3.
-
Device Physics and Fabrication:
- Diamond Device Physics: Explanation of the fundamental physics governing diamond-fabricated devices (Schottky barrier diodes, FETs, and MOSFETs).
- AlGaN Device Development: Focus on the fabrication and performance of AlGaN-based power electronic and optoelectronic devices.
-
Material Characterization (Diamond and Sapphire):
- Mechanical Properties: Measurement of hardness, tensile/compressive strength, Youngâs modulus, and elastic constants.
- Thermal Properties: Analysis of expansion, specific heat, and thermal conductivity.
- Optical Properties: Determination of transmission range (UV to far IR), refractive index, and absorption characteristics.
- Light Scattering: Investigation using Raman and Brillouin scattering techniques.
Commercial Applications
Section titled âCommercial ApplicationsâThe UWBGS research directly supports several high-growth sectors requiring extreme performance characteristics not achievable with traditional silicon or current WBG materials.
| Industry/Application | Material Focus | Commercial Product Examples |
|---|---|---|
| High-Efficiency Power Electronics | AlGaN, beta-Ga2O3, Diamond | Inverters, converters, solid-state switching devices for electric vehicles and grid infrastructure. |
| Optoelectronics | AlGaN | Advanced light-emitting and detection devices requiring specific bandgap characteristics. |
| Specialized Sensing | Diamond | Solar-blind deep-UV detectors used in defense, space, and industrial monitoring. |
| Harsh Environment Electronics | UWBGS (General) | Components requiring high temperature stability and resistance to high irradiation environments. |
| Laser Technology | Sapphire (Doped) | Active media for chromium-doped and titanium-doped sapphire lasers. |
View Original Abstract
The following 6 books are reviewed: Physical Properties of Diamond and Sapphire (Aggarwal, R.L. and Ramdas, A.K.; 2019); Ultra-Wide Bandgap Semiconductor Materials (Liao, M, et al; 2019); Transformer Design Principles, 3rd Edition (DelVecchio, R.M., 2018); Lubrication of Electrical and Mechanical Components in Electrical Power Equipment (Chudnovsky, B.H.; 2019); Encapsulation Technologies for Electronic Applications, 2nd Edition (Ardebili, H., et al); and The Mathematics that Power Our WorldâHow Is It Made? (Khoury, J. and Lamothe, G.; 2016).