Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-03-03 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Authors | Rawiwan Chaleawpong, Nathaporn Promros, Peerasil Charoenyuenyao, Phongsaphak Sittimart, Satoshi Takeichi |
| Institutions | Kyushu Institute of Technology, King Mongkutās Institute of Technology Ladkrabang |
| Citations | 1 |
Abstract
Section titled āAbstractāCoaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature in order to calculate the requisite junction parameters using the Cheung and Norde approaches. For the calculation based on the Cheung approach, the series resistance ( R s ), ideality factor ( n ) and barrier height ( Ī¦ b ) were 4.58 kĪ©, 2.82 and 0.75 eV, respectively. The values of R s and Ī¦ b were in agreement with those calculated using the Norde approach. Their characteristics for alternative current impedance at different frequency values were measured and analyzed as a function of the voltage (V) values ranging from 0 V to 0.5 V. Appearance of the real ( Z ā²) and imaginary ( Z ā³) characteristics for all V values presented single semicircles. The centers of the semicircular curves were below the Z ā² axis and the diameter of the semicircles decreased with increments of the V value. The proper equivalent electrical circuit model for the manufactured heterojunction behavior was comprised of R s combined with the parallel circuit of resistance and constant phase element.