Control of n-type electrical conductivity for cubic boron nitride (c-BN) epitaxial layers by Si doping
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-04-20 |
| Journal | Applied Physics Letters |
| Authors | Kazuyuki Hirama, Yoshitaka Taniyasu, Hideki Yamamoto, Kazuhide Kumakura |
| Institutions | NTT Basic Research Laboratories |
| Citations | 28 |
Abstract
Section titled āAbstractān-type Si-doped cubic boron nitride (c-BN) (001) layers were heteroepitaxially grown on insulating diamond (001) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The Si donor ionization energy (ED) was estimated to be about 0.24 eV from the temperature dependence of the electron concentration, taking the screening effect into account. Thanks to the low concentration of residual impurities in the MBE-grown c-BN epitaxial layer, the resistivity can be widely varied from about 1 Ć 108 Ī© cm for an undoped c-BN layer to 260 Ī© cm for a Si-doped one with a dopant concentration of 1.5 Ć 1019 cmā3.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1995 - Diamond: Electronic Properties and Applications