Hydrogen terminated diamond diode with high breakdown voltage
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-04-17 |
| Journal | Sixth Symposium on Novel Optoelectronic Detection Technology and Applications |
| Authors | Jinfeng Zhang, Jun Liu, Qi He, Zeyang Ren, Kai Su |
| Institutions | Wuhu Institute of Technology, Xidian University |
Abstract
Section titled āAbstractāThe hydrogen terminated diamond schottky barrier diode was fabricated on single crystal diamond substrate that grown by using microwave plasma chemical vapor deposition system. Current-voltage characteristics of the device with radius of Schottky electrode of 70Ī¼m and the Schottky-Ohmic interspace of 10 μm was measured. The device shows good rectification properties. The current density is 5A/cm<sup>2</sup> at the forward voltage of -4V, and a low reverse current is ~10-7 A/cm<sup>2</sup> is obtained. The conduction mechanism of the device was analyzed, and the barrier height of Schottky contact was calculated to be 1.01eV. The direct current characteristics of the devices with different Schottky-Ohmic interspaces or Schottky areas are compared. In addition a high reverse breakdown voltage of 1200V has been achieved on the device with the interspace of 10μm, which suggests that the electric field reaches 1.2 MV/cm. This device has potential to be used in the fields of high power and high voltage application.