Low interface trap density in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on CVD-Diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-04-01 |
| Authors | Kumud Ranjan, S. Arulkumaran, Geok Ing Ng, Abhinay Sandupatla |
| Institutions | Nanyang Technological University |
| Citations | 3 |
Abstract
Section titled “Abstract”The interface trap behavior in SiNx/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) and Schottky HEMTs on CVD diamond was studied using parallel conductance techniques. In MISHEMTs, two different types of traps were identified, fast with the time constant <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\tau_{\mathbf{T}}\equiv(\mathbf{0.1}-\mathbf{3.6})\mu\mathbf{s}$</tex> and slow with <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\tau_{\mathbf{T}}\equiv\mathbf{6}$</tex> ms whereas, only fast traps were obtained in conventional HEMTs. These fast traps could be related to AlGaN/GaN hetero-interface which are identical in both the devices. The density of fast trap <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$(\pmb{D}_{\mathbf{TT}})$</tex> is almost similar for MIS-HEMTs and HEMTs (∼of <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\mathbf{0.7}-\mathbf{8\ x\ 10}^{\mathbf{11}}\mathbf{cm}^{-\mathbf{2}}\mathbf{eV}^{-\mathbf{1}})$</tex> . The density of slow trap <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$(\pmb{D}_{\mathbf{Ts}})$</tex> in MIS-HEMTs was estimated as <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\sim\mathbf{6}-\mathbf{11\ x\ 10}^{\mathbf{12}}\mathbf{cm}^{-\mathbf{2}}\mathbf{eV}^{-\mathbf{1}}$</tex> which could be related to the Schottky/dielectric interface.