Perspectives from research on metal-semiconductor contacts - Examples from Ga2O3, SiC, (nano)diamond, and SnS
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-04-13 |
| Journal | Journal of Vacuum Science & Technology A Vacuum Surfaces and Films |
| Authors | Lisa M. Porter, Jenifer R. Hajzus |
| Institutions | Carnegie Mellon University, American Society For Engineering Education |
| Citations | 21 |
Abstract
Section titled āAbstractāAs part of a Special Issue in Honor of 30 years of the American Vacuum Societyās Nellie Yeoh Whetten Award, this Invited Perspective discusses results and trends from the authorsā and other published research on metal contacts to Ī²-Ga2O3, (4H and 6H)-SiC, nanocrystalline diamond (NCD), and nanocrystalline thin films and single-crystalline nanoribbons of Ī±-SnS. The paper is not a comprehensive review of research on contacts to each of these semiconductors; it is instead a perspective that focuses on Schottky barrier height (Ī¦b) measurements and factors that affect Ī¦b, such as metal work function (Ī¦m) and crystallographic surface plane. Metals and the associated processing conditions that form ohmic or Schottky contacts to each of these semiconductors are also described. Estimates of the index of interface behavior, S, which measures the dependence of Ī¦b on Ī¦m, show large variations both among different semiconductors (e.g., S ā¼ 0.3 for NCD and S ā¼ 1.0 for SnS nanoribbons) and between different surface planes of the same semiconductor [e.g., (2ĀÆ01) vs (100) Ga2O3]. The results indicate that Ī¦b is strongly affected by the nature of the semiconductor surface and near-surface region and suggest that the sharp distinction between covalent and ionic semiconductors as described in seminal theories can be adjustable.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2019 - Gallium OxideāTechnology, Devices and Applications