A Phenomenological Model of Mott's Insulator–Metal Phase Transition in 3D and 2D Boron‐Doped Diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-05-08 |
| Journal | physica status solidi (b) |
| Authors | V. A. Kukushkin |
| Institutions | Institute of Applied Physics, Yaroslav-the-Wise Novgorod State University |
| Citations | 3 |
Abstract
Section titled “Abstract”A phenomenological model of Mott’s insulator-metal phase transition in boron‐doped diamond is suggested and developed. It is shown that the transition critical boron atom concentration in 3D samples at room temperature calculated on its base coincides with the experimental data. It allows to use the model for the evaluation of the transition critical sheet boron atom concentration for an experimentally much less investigated case of 2D boron‐doped diamond. This gives a value of 3.3 × 10 13 cm −2 at room temperature in agreement with experimental data on so‐called delta layers. The latter are thin boron‐doped layers embedded in intrinsic diamond and can be used for the creation of the conductive channels of high‐speed diamond field‐effect transistors.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 1994 - Semiconductors and Semimetals