Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in Diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-07-28 |
| Journal | Materials science forum |
| Authors | Shinichi Shikata |
Abstract
Section titled “Abstract”X-ray topography is an effective tool to investigate dislocations in semiconductor crystals. Due to low X-ray absorption coefficients of diamond, X-rays can penetrate deep into the crystal. Thus, deep three-dimensional (3D) dislocations are projected on two-dimension (2D) film, which makes dislocation analysis particularly challenging. Dislocation vectors from the films obtained using a set of the same diffraction vectors were identified using topographical and geometrical analyses. The depth and position of the dislocations in a crystal that was projected on a film were determined using geometrical relationship. The proposed analysis method was verified by analyzing several dislocations using four <404> diffraction films. The types of dislocation were identified through Burgers vector analysis.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
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