Graphene-diamond junction photoemission microscopy and electronic interactions

At a Glance

Metadata	Details
Publication Date	2020-07-10
Journal	Nano Express
Authors	Gary Wan, Sanjeevani Panditharatne, Neil A. Fox, Mattia Cattelan
Institutions	University of Bristol
Citations	13

Abstract

Abstract Polycrystalline graphene was transferred onto differently terminated epitaxial layers of boron-doped diamond deposited onto single crystal substrates. Chemical and electronic characterisation was performed using energy-filtered photoemission electron microscopy and angle-resolved photoemission spectroscopy. Electronic interaction between the diamond and graphene was observed, where doping of the graphene on the hydrogen and oxygen terminated diamond was n-doping of 250 meV and 0 meV respectively. We found that the wide window of achievable graphene doping is effectively determined by the diamond surface dipole, easily tuneable with a varying surface functionalisation. A Schottky junction using the graphene-diamond structure was clearly observed and shown to reduce downward band bending of the hydrogen terminated diamond, producing a Schottky barrier height of 330 meV.

Tech Support

Original Source

DOI: https://doi.org/10.1088/2632-959x/aba443

References

2008 - Superior thermal conductivity of single-layer graphene [Crossref]
2008 - Measurement of the elastic properties and intrinsic strength of monolayer graphene [Crossref]
2004 - Electric field effect in atomically thin carbon films [Crossref]
2015 - Melting temperature of graphene [Crossref]
2013 - Graphene transistors: status, prospects, and problems [Crossref]
2011 - Chemical doping of graphene [Crossref]
2007 - Energy band-gap engineering of graphene nanoribbons [Crossref]
2009 - Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties [Crossref]
2012 - Graphene-based semiconductor photocatalysts [Crossref]
2012 - Graphene plasmonics [Crossref]