Near Infrared Photoluminescence of N<sub>C</sub>V<sub>Si</sub><sup>-</sup> Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-07-28 |
| Journal | Materials science forum |
| Authors | Shin Sato, Takuma Narahara, Shinobu Onoda, Yuichi Yamazaki, Yasuto Hijikata |
| Institutions | RMIT University, MIT University |
| Citations | 1 |
Abstract
Section titled āAbstractāThis paper reports optical propertites of negatively charged N C V Si - centers in silicon carbide (a nitrogen substituting for a carbon atom adjacent to a silicon vacancy) whose emission wavlength is 1100-1500 nm at room temperature. High-purity semi-insulating (HPSI) 4H-SiCs are implanted with high energy N ion beams and subsequently thermally annealed to form N C V Si centers. We investigated a wide range of N ion implantation dose using a micro ion beam implantation technique and observed the photoluminescence intensity from the SiC-NV centers. We show that under conditions of heavy implantation, the excitation laser power excites residual defects and their fluorescences intereferes with the emission from the N C V Si - centers. These results allow us to clarify the requirements to optically detect isolated single N C V Si - centers at lightly implanted conditions.