Polycrystalline Diamond MOSFET With MoO3 Gate Dielectric and Passivation Layer
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2017-07-17 |
| Journal | IEEE Electron Device Letters |
| Authors | Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Dazheng Chen |
| Institutions | Xidian University |
| Citations | 19 |
Abstract
Section titled “Abstract”We report the hydrogen terminated polycrystalline diamond MOSFET with a 10-nm MoO <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</sub> gate dielectric and a 50-nm MoO <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</sub> passivation layer. The device with a gate length of 2 μm shows the saturation drain current (IDsat) of 100 mA/mm, the transconductance of 35 mS/mm, and the ON-resistance of 76.54 Q·mm at V <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>GS</sub> = -2.5 V. The stability of the repeated I <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DS</sub> -V <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>GS</sub> measurements was demonstrated by a mere I <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>Dsat</sub> decrease of 3.3% between the first and third sweepings. In addition, the devices worked well at 200 °C delivering even larger I <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>Dsat</sub> than that at room temperature. The possible mechanisms for I <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DS</sub> -V <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>GS</sub> changes in the successive measurements and induced by the change of the ambient temperature are suggested.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2000 - MoO3: Optical properties dielectric constants