Microwave diamond devices technology - Field‐effect transistors and modeling
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-08-26 |
| Journal | International Journal of Numerical Modelling Electronic Networks Devices and Fields |
| Authors | Zhihao Chen, Yu Fu, Hiroshi Kawarada, Yuehang Xu |
| Institutions | University of Electronic Science and Technology of China, Waseda University |
| Citations | 18 |
Abstract
Section titled “Abstract”Abstract This paper provides an overview of the developments in microwave diamond field‐effect transistor (D‐FET) technologies. Due to the ultrawide‐bandgap and high carrier velocity and thermal conductivity of diamond, it is a potential candidate for microwave power devices with high output power and operating frequency. Here, the properties of semiconductor materials for microwave applications are described. Then, the mechanisms of various diamond FETs are detailed. In recent years, hydrogen‐terminated diamond metal‐oxide‐semiconductor field‐effect transistors (HD MOSFETs) have been widely studied for their potential use in microwave power devices. Therefore, the structures and developments of HD MOSFETs are mainly discussed. Finally, in the prospective application of the HD FET microwave circuit, the state‐of‐the‐art large‐signal modeling of HD MOSFETs is presented.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2017 - High power diamond devices with 2‐D transport channels
- 2019 - Diamond power devices: state of the art, modelling, figures of merit, and future perspective