Skip to content
6CCVD Research

TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2020-08-13
JournalIEEE Transactions on Electron Devices
AuthorsLuigi Balestra, Susanna Reggiani, A. Gnudi, Elena Gnani, J. Dobrzynska
InstitutionsUniversity of Bologna, ABB (Switzerland)
Citations2

Abstract

Section titled ā€œAbstractā€

The sensitivity of discrete large-area power devices to the design aspects of the termination region and to the charging effects of the electroactive passivation layer on top is presented in this work. The junction termination featuring the variation of lateral doping (VLD) is revisited for such devices by focusing on the interaction with the passivation material on top. To this purpose, an ideal dielectric (SiO 2 ) is compared with differently-doped diamond-like carbon (DLC) by incorporating the passivation layer in the TCAD setup. The simulation analysis rigorously explains the impact of the DLC material on the layout reoptimization of a specific reference diode.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2007 - Semiconductor component having a pn junction and a passivation layer applied on a surface
  2. 2019 - Novel 550A/3300V module with IGBT4 and .XT Technology in XHPTM3 package to enhance power density and lifetime for next generation power converters

Reads Similar to This

Transient thermoreflectance wafer mapping for process control and development - GaN-on-Diamond Performance Enhancement of Al2O3/H-Diamond MOSFETs Utilizing Vacuum Annealing and V2O5 as a Surface Electron Acceptor Towards wide-field imaging of brain slices using a quantum diamond microscope (Conference Presentation)