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6CCVD Research

Performance Enhancements of Low-Voltage LDMOS Power Switches by In-chip Integration of a Microcrystalline Diamond Substrate

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-06-20
AuthorsYoni Mehlman, Sharon Levin, D. Mistele, Naseem Hayek, Nir Nierenberg
InstitutionsTower Semiconductor (Israel)
Citations2

Abstract

Section titled ā€œAbstractā€

Incorporation of a microcrystalline diamond layer in silicon chip substrates of 65-nm node n-LDMOS power switches presents a heat spreading effect that reduces hotspot temperatures. The extreme heat conductivity of diamond, 1500 W/(m*K), four time higher than copper and 10 times higher than silicon, reduces the thermal flux and hence the junction temperatures. The introduction of diamond layers displays a thermal short that drastically reduces temperature variations across the chip. Comparative characterization of LDMOS devices displays a 20-80 degree reduction in junction temperature when operated in saturation. A tripling in energy-handling capability for VIS switching mode is observed in a device where a microcrystalline diamond layer is integrated.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2014 - Recent progress in GaN-on-diamond device technology

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