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THz generation and detection using field effect periodic structures of variable width

MetadataDetails
Publication Date2020-08-20
AuthorsG. R. Aǐzin, J. Mikalopas, M. S. Shur
InstitutionsRensselaer Polytechnic Institute, City University of New York

The field effect transistor structures with periodically changing width support excitations of the electron density (plasma waves) in the gated channels. We present the variable width design of such structures that support the plasma wave instabilities enabling terahertz (THz) emission and amplification. This design includes narrow protruding gated regions - plasmonic stubs - that enable the energy pumping of the plasma oscillations. Our calculations show that efficient THz radiation could be achieved in a wide sub-THz and THz band using feature sizes from 22 nm to 130 nm and materials such as Si, GaN, InGaAs, and p-diamond.