1.2 A/mm Drain Current Density and 1.1 Ω mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped Diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-09-28 |
| Journal | Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials |
| Authors | Yukiko Suzuki, Shoichiro Imanishi, Ken Kudara, Kiyotaka Horikawa, Shotaro Amano |
Abstract
Section titled “Abstract”2020 International Conference on Solid State Devices and Materials ,1.2 A/mm Drain Current Density and 1.1 Ω mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped Diamond