Extended T2 times of shallow implanted NV in chemically mechanically polished diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-02-03 |
| Journal | Applied Physics Letters |
| Authors | Sylvanus A. Tyler, John W. Newland, P.A. Hepworth, Anjana Wijesekara, I. R. Gullick |
| Institutions | Element Six (Germany), University of Warwick |
Abstract
Section titled āAbstractāMechanical polishing of diamond is known to be detrimental to the spin coherence time and strain environment of near-surface defects via intrinsic introduction of subsurface damage: this damage is typically removed by inductively coupled plasma reactive ion etching (ICP-RIE). By utilizing a chemical mechanical polishing (CMP) process to prepare āØ001ā© diamond surfaces, we demonstrate that we can achieve 13C-limited spin lifetimes of shallow implanted (ā¤34 nm) nitrogen vacancy (NV) centers in an industrially scalable process. We compare spin lifetimes (T2) of three diamonds processed with CMP with one processed by ICP-RIE and observe an increased median T2 of 340 Ī¼s in the CMP-processed samples for 15NV centers implanted and annealed under identical conditions.