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Adjustable charge states of nitrogen-vacancy centers in low-nitrogen diamond after electron irradiation and subsequent annealing

MetadataDetails
Publication Date2020-10-26
JournalApplied Physics Letters
AuthorsRuiang Guo, Kaiyue Wang, Yufei Zhang, Zunpeng Xiao, Gangyuan Jia
InstitutionsTaiyuan University of Science and Technology, Xi’an Jiaotong University
Citations28

In this work, we investigate the photoluminescence spectra of nitrogen-vacancy (NV) centers in low-nitrogen diamond under 200 keV electron irradiation. We discuss the dependence of NV center charge states on annealing temperature, laser excitation power, and measurement temperature. The results show that the NV centers in low-nitrogen diamond are more likely to exist in the form of NV0 centers. Annealing breaks the charge balance between two charged NV centers, and, as the annealing temperature increases (300-800 °C), NVāˆ’ centers are converted into NV0 centers. Meanwhile, the NV intensities significantly increase when the nitrogen atoms capture the vacancies after electron irradiation and subsequent annealing. With increases in laser power, the NVāˆ’ centers are more prone to Auger recombination, and thus, the NVāˆ’ centers are converted into NV0 centers. In addition, the NV centers are quenched by increases in measurement temperature, but the measurement temperature does not affect their intensity ratio. This result indicates that low-nitrogen diamond becomes more likely to form stable NV0 and NVāˆ’ centers at different measurement temperatures.

  1. 1976 - Optical studies of the 1.945 eV vibronic band in diamond [Crossref]