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Diamond step-index nanowaveguide to structure light efficiently in near and deep ultraviolet regimes

MetadataDetails
Publication Date2020-10-28
JournalScientific Reports
AuthorsNasir Mahmood, Muhammad Qasim Mehmood, Farooq A. Tahir
InstitutionsInformation Technology University, National University of Sciences and Technology
Citations19
AnalysisFull AI Review Included
  • Core Innovation: Introduction of Diamond Step-Index Nanowaveguides (DSINs) as ultra-low loss meta-atoms for highly efficient light structuring in the Near and Deep Ultraviolet (UV) regimes (250 nm to 400 nm).
  • Material Advantage: Diamond is selected for its ultra-low loss (extinction coefficient k approx 0) and large bandgap (5.5 eV), providing transparency where conventional dielectrics (e.g., TiO2, Si3N4) absorb UV light.
  • Wavefront Control: The DSINs achieve complete (0-2pi) phase coverage and high transmission amplitude by spatially varying the nanowaveguide diameter (D) based on indexed waveguide theory.
  • Efficiency: The designed DSIN metasurfaces exhibit high average transmission efficiency, approximately 84%, across the entire spectrum of interest (250 nm to 400 nm), with peak efficiency reaching 96.5% (at 400 nm).
  • Validation: The absolute control over phase and amplitude is verified by designing polarization-insensitive meta-holograms (NUST and ITU images) at the operational wavelength of lambda = 250 nm.
  • Miniaturization: The high refractive index of diamond (n approx 2.4) allows for a low aspect ratio (AR = 5.7) of the meta-atoms, facilitating easier fabrication and miniaturized on-chip integration.
ParameterValueUnitContext
Core MaterialDiamondN/AUltra-low loss dielectric.
Substrate MaterialSiO2 (Glass)N/AUsed for patterning the DSINs.
Bandgap (Eg)5.5eVDetermines UV transparency window.
Cutoff Wavelength (lambdac)226nmWavelength threshold for transparency (k approx 0).
Refractive Index (n)2.406N/AHigh index at 633 nm (facilitates low aspect ratio).
Extinction Coefficient (k)0.00N/AAbsolute transparency in the UV regime.
DSIN Height (H)400nmFixed thickness of the nanowaveguide.
Aspect Ratio (AR)5.7N/AHeight-to-minimum diameter ratio (within fabricate-able limits).
Operational Wavelength (lambdad)250, 300, 350, 400nmSpectrum of interest (Near and Deep UV).
Diameter Range (lambdad=250 nm)70 to 98nmRange used for achieving 0-2pi phase coverage.
Optimized Periodicity (lambdad=250 nm)140nmLattice constant (U) of the unit cell.
Average Transmission Efficiencyapprox 84%Efficiency across the entire spectrum of interest.
Peak Transmission Efficiency96.5%Achieved at lambdad = 400 nm.
Metasurface Size12.2 x 12.2”m2Total area of the simulated meta-hologram.
Pixel Array Size175 x 175PixelsNumber of DSIN elements in the simulation.
Focal Length (f)14”mDistance for holographic image reconstruction.
  1. Material Selection and Characterization: Diamond was chosen based on energy bandgap analysis (Eg = 5.5 eV) to confirm its transparency window (lambda > 226 nm) and high refractive index, comparing favorably against TiO2, Si3N4, and a-Si:H.
  2. Theoretical Waveguide Modeling: The underlying physics was established using indexed waveguide theory, deriving transcendental equations (Eqs. 6 and 7) from Maxwell’s equations to determine the propagation constant (beta) and effective refractive index (neff) for the hybrid (HE and EH) modes within the DSIN.
  3. Numerical Optimization (FDTD): Full-wave Finite-Difference Time-Domain (FDTD) simulations were performed on the circular cylindrical DSIN unit cell (H = 400 nm) using Perfect Matching Layers (PML) along the z-axis and periodic boundaries along the x- and y-axes.
  4. Phase and Amplitude Control: The DSIN diameter (D) was spatially swept (e.g., 70 nm to 98 nm for lambdad = 250 nm) while optimizing the unit cell periodicity (U) to achieve complete (0-2pi) phase coverage and maximize transmission amplitude simultaneously.
  5. Phase Retrieval Algorithm: The Gerchberg-Saxton (GS) iterative Fourier transform algorithm was employed to calculate the required discrete phase distribution (175 x 175 array) necessary to generate the target holographic images.
  6. Meta-Hologram Implementation: The calculated phase distribution was translated into a corresponding spatial variation of the optimized DSIN diameters (D) to construct the final polarization-insensitive meta-hologram for validation at lambda = 250 nm.
  • Deep UV Photolithography: The high efficiency and short operational wavelengths (down to 250 nm) make this technology suitable for next-generation, high-resolution patterning in semiconductor fabrication.
  • Miniaturized CMOS Integration: The compact 2D metasurface design and low aspect ratio (AR = 5.7) ensure compatibility with existing Complementary Metal-Oxide-Semiconductor (CMOS) fabrication processes, enabling on-chip UV optical systems.
  • High-Resolution UV Imaging: Applicable in advanced microscopy and high-resolution imaging systems that require Deep UV light for enhanced spatial accuracy, such as biological imaging and non-invasive diagnostics.
  • UV Sensing and Spectroscopy: Diamond’s ultra-low loss nature provides an ideal platform for highly sensitive UV sensors and compact spectroscopic devices, particularly in harsh or high-temperature environments.
  • Flat Optics and Lenses: Used to create compact, high-numerical-aperture flat lenses and other optical elements (like wave-plates and beam generators) operating efficiently in the UV spectrum.
  • Information Security and Displays: Implementation of high-fidelity, computer-generated meta-holograms for applications in data storage, information encryption, and 3D displays.