Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-11-16 |
| Journal | Applied Physics Letters |
| Authors | Shoya Fukumoto, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa |
| Institutions | Tokyo University of Science, National Institute of Advanced Industrial Science and Technology |
| Citations | 19 |
Abstract
Section titled āAbstractāA diamond (111) substrate cleaned with an NH3/H2O2 mixture could form low-temperature direct bonding under atmospheric conditions. When the diamond surface was bonded with a plasma activated SiO2 surface at 200 Ā°C, the bonding strength was sufficiently high so that cleavage within diamond occurred in a shear test. Moreover, the diamond and Si substrates treated with the NH3/H2O2 mixture could form atomic bonds with a 2.5-nm-thick oxide intermediate layer. This bonding method can be applied to electronic devices using diamond because heterogeneous integration can be achieved using a popular wafer cleaning process followed by low-temperature annealing.