(Invited) Defect and Impurity Characterization in Wide Bandgap Materials and Interfaces - Impact on Thermal Transport
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-11-23 |
| Journal | ECS Meeting Abstracts |
| Authors | Mark S. Goorsky, Patrick E. Hopkins, Tengfei Luo, Asegun Henry, Samuel Graham |
Abstract
Section titled āAbstractāWide bandgap materials are suitable for high power and high temperature applications. However, these materials, and metal layers that are part of device structures must effectively transport heat from the active device regions. Structural defects, chemical defects, and interface properties can degrade thermal transport, but relatively little attention has been paid to the precise nature of these defects and how they impact thermal transport. Electron microscopy and x-ray scattering based techniques are employed to provide insight into the defects present in these materials. When these techniques are integrated with thermal transport measurements and theoretical insights gained from molecular dynamics simulations, a much better understanding of thermal transport in wide bandgap materials can be realized. Examples of how defects impact transport for diamond boundary interfaces, AlN layers, and GaN heterostructures will be presented.