Nitride Heterostructures and High-Electron-Mobility Transistors on Composite Silicon-Polycrystalline Diamond Substrates
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-11-01 |
| Journal | Nanotechnologies in Russia |
| Authors | И. А. Черных, И. С. Езубченко, I. O. Mayboroda, И. А. Черных, E. M. Kolobkova |
| Institutions | Prokhorov General Physics Institute, Kurchatov Institute |
| Citations | 1 |
Abstract
Section titled “Abstract”A new type of substrates for the growth of nitride heterostructures is presented that consists of a 125-nm thick silicon layer and 290-μm thick polycrystalline diamond. The possibility of epitaxial growth of nitride heterostructures on silicon-polycrystalline diamond substrates with characteristics at the level of heterostructures on silicon substrates is shown. The test transistors demonstrated the following: saturation current density of more than 1 A/mm and breakdown voltage of more than 90 V. The achieved results open up opportunities for the emergence of a new class of silicon-polycrystalline diamond substrates and the creation of powerful gallium nitride transistors with previously unattainable characteristics.